-
1 bulk CMOS process
технологія KMOН ІС на напівпровідниковій підкладці (без епітаксійного шару)English-Ukrainian dictionary of microelectronics > bulk CMOS process
-
2 process
1. ім.1) процес; (технологічний) метод, спосіб2) технологія (див. т-ж technique, technology)3) (технологічна) обробка; технологічна операція2. дієсл. обробляти; проводити технологічну операцію - all-ion-implant process
- all-planar process
- Auger process
- batch process
- BH bias and hardness process
- BH process
- bonding process
- BOX process
- bulk CMOS process
- bumping process
- chip-on-board process
- closed CMOS process
- CMOS-on-sapphire process
- composite сеll logic process
- contact process
- conventional process
- deep охide isolation process
- DIFET process
- diffused eutectic aluminum process
- direct synthesis and crystal pull process
- double-diffused process
- double ion-implanted process
- double-layer polysilicon gate MOS process
- double-layer polysilicon gate process
- epitaxial deposition process
- epitaxial process
- epitaxial growth process
- flip-over process
- floating-gate silicon process
- front-end process
- gold-doped process
- guard-banded CMOS process
- heterogeneous process
- high-voltage process
- HMOS process
- imaging process
- implantation process
- in-house process
- interconnection process
- inverted meniscus process
- ion plating process
- isoplanar -S, -Z, -2 process
- isoplanar process
- junction-isolated process
- laser-recrystallized process
- lithographic process
- low-pressure process
- low VT process
- lost wafer process
- major process
- masking process
- master slice process
- mesa-isolation process
- metal-gate MOS process
- metal-gate process
- microbipolar LSI process
- micrometer-dimension process
- mid-film process
- Minimod process
- Mo-gate MOS process
- Mo-gate process
- nitride process
- nitrideless process
- NSA process
- oxide-film isolation process
- oxide isolated process
- oxygen refilling process
- patterning process
- phosphorous buried-emitter process
- photoablative process
- photolithography process
- photoresist process
- planar oxidation process
- Planox process
- plasma etch process
- Poly I process
- Poly II process
- Poly 5 process
- poly-oxide process
- Poly-Si process
- polysilicon-gate process
- poly-squared MOS process
- proprietary process
- PSA bipolar process
- PSA process
- refractory metal MOS process
- refractory metal process
- sacrificial охide process
- sapphire dielectric isolation process
- scaled Poly 5 process
- screen-and-fire process
- selective field-охidation process
- self-aligned gate process
- self-aligned process
- self-registered gate process
- self-registered process
- semi-additive process
- semiconductor-thermoplastic-dielectric process
- semicustom process
- shadow masking process
- silk-screen process
- single poly process
- SMOS process
- SOS/CMOS process
- stacked fuse bipolar process
- Stalicide process
- step-and-repeat process
- subtractive-fabrication process
- surface process
- Telemos process
- thermal process
- thermally асtivated surface process
- thermal-охidation process
- three-mask process
- triple-diffused process
- triply-poly process
- twin-tub process
- twin-well process
- V-groove MOS process
- V-groove process
- wet process
- 3-D process -
3 device
1) прилад (напр. ІС, транзистор, діод); компонент; елемент 2) пристрій - active device
- add-on device
- analog device
- array device
- attached device
- backup device
- beam-leadeddevice
- beam-leaddevice
- bipolar device
- bipolar-MOS device
- blown-fuse device
- bubble-domain device
- bubble- device
- bucket-brigade device
- bulk асoustic-wave device
- bulk-channel carrier-transfer device
- bulk-effect device
- carrier-transfer device
- charge-coupled device
- charge-domain device
- charge-injection device
- charge-priming device
- charge-transfer device
- chip-and-wire device
- CMOS device
- CMOS/SOS device
- compound-semiconductor device
- contiguous-disk device
- controlled surface device
- custom-designed device
- custom device
- dense device
- depletion-modedevice
- depletiondevice
- dielectric isolation device
- diffused device
- discrete device
- double-diffused MOS device
- elastic-surface-wave device
- electrooptic device
- elementary device
- enchancement-mode device
- enchancement device
- end-use device
- epiplanar device
- epitaxial device
- FAMOS device
- field-effect device
- field-programmable device
- FIMOS device
- functional device
- graded-gap semiconductor device
- graded-gap device
- Gurm-effect device
- Gurm device
- Hall-effectdevice
- Halldevice
- hardeneddevice
- harddevice
- heteroepitaxial device
- heterojunction device
- high-gain device
- high-immunity noise device
- high-technology device
- high-threshold device
- homojunction device
- hybrid high-power device
- identification device
- I2L device
- image [imaging] device
- IMPATT device
- implanted device
- integrated-optic device
- integrated semiconductor device
- integration device
- interdigitated device
- interface device
- Josephson-junctiondevice
- Josephsondevice
- Josephson logic device
- junction-isolated device
- large-scale integrated device
- large-scale integration device
- latch-up free CMOS device
- leaded device
- leadless inverted device
- light-wave device
- locked-in device
- logic array device
- low-power Schottky device
- magnetostatic-wave device
- majority-carrier device
- mask-programmable device
- metal-masked device
- metal-semiconductor device
- microdiscrete device
- microelectronic device
- minority-carrier device
- MIS-type device
- MIS device
- mixed-process device
- mixed device
- molecular-beam epitaxy-based device
- monolithic device
- MOS device
- MTL device
- multilayered device
- multilevel device
- n-channel MOS device
- n-channel device
- negative-resistance device
- non-CPU device
- n–p–n device
- off-chip device
- on-chip device
- optocoupler semiconductor device
- optocoupling device
- passive device
- p-channel MOS device
- p-channel device
- peripheral device
- permalloy bubble device
- permalloy T-bar device
- photo-coupled semiconductor device
- photosensitive device
- piezoelectric device
- piggyback device
- planar device
- plotting device
- plug-in device
- p-n-p device
- positioning device
- printing device
- programmable logic-array device
- programmable device
- quantum device
- quantum-well device
- redundancy device
- resin-molded device
- SAW device
- SAW delay device
- scaled-downdevice
- scaleddevice
- Schottky-barrier device
- Schottky device
- second-source device
- self-aligned semiconductor device
- semiconductor-on-sapphire
- silicon-on-dielectric device
- silicon-on-insulator device
- silicon-on-sapphire device
- single device
- single-crystal device
- slow device
- SLS device
- small-geometry device
- solder-evacuator device
- SOS/MOS device
- stacked semiconductor device
- static-sensitive device
- stripeline device
- submicron-scale MOS device
- superconducting Josephson-junction device
- superconducting quantum interference device
- superconductive quantum interferometric device
- super-lattice functional device
- superstructure device
- surface-acoustic-wave device
- surface charge-transfer device
- surface-mounted device
- switching device
- TAB device
- thermocompression bonded device
- thick-film device
- thin-film device
- transcalent device
- transferred-electron device
- transil-time-negative-resistance device
- trench isolated device
- tunnel -еffect device
- tunnel device
- two-level polysilicon MOS device
- ULA device
- ultrafine-scale device
- ultra-large-scale integrated device
- ultra-submicron device
- uncased device
- vertical-junction device
- very large-scale integrated-circuit device
- very large-scale integration device
- V-groove MOS device
- V-groove device
- wafer-printing device
См. также в других словарях:
bulk CMOS process — jungtinių MOP darinių su puslaidininkiniu padėklu technologija statusas T sritis radioelektronika atitikmenys: angl. bulk CMOS process; bulk complementary MOS process vok. volumenkomplementäre MOS Technologie, f rus. КМОП технология на… … Radioelektronikos terminų žodynas
bulk complementary MOS process — jungtinių MOP darinių su puslaidininkiniu padėklu technologija statusas T sritis radioelektronika atitikmenys: angl. bulk CMOS process; bulk complementary MOS process vok. volumenkomplementäre MOS Technologie, f rus. КМОП технология на… … Radioelektronikos terminų žodynas
technologie CMOS sur substrat semi-conducteur — jungtinių MOP darinių su puslaidininkiniu padėklu technologija statusas T sritis radioelektronika atitikmenys: angl. bulk CMOS process; bulk complementary MOS process vok. volumenkomplementäre MOS Technologie, f rus. КМОП технология на… … Radioelektronikos terminų žodynas
jungtinių MOP darinių su puslaidininkiniu padėklu technologija — statusas T sritis radioelektronika atitikmenys: angl. bulk CMOS process; bulk complementary MOS process vok. volumenkomplementäre MOS Technologie, f rus. КМОП технология на полупроводниковой подложке, f pranc. technologie CMOS sur substrat semi… … Radioelektronikos terminų žodynas
volumenkomplementäre MOS-Technologie — jungtinių MOP darinių su puslaidininkiniu padėklu technologija statusas T sritis radioelektronika atitikmenys: angl. bulk CMOS process; bulk complementary MOS process vok. volumenkomplementäre MOS Technologie, f rus. КМОП технология на… … Radioelektronikos terminų žodynas
КМОП технология на полупроводниковой подложке — jungtinių MOP darinių su puslaidininkiniu padėklu technologija statusas T sritis radioelektronika atitikmenys: angl. bulk CMOS process; bulk complementary MOS process vok. volumenkomplementäre MOS Technologie, f rus. КМОП технология на… … Radioelektronikos terminų žodynas
Itanium — 2 processor Produced From mid 2001 to present Common manufacturer(s) Intel Max. CPU c … Wikipedia
Integrated circuit — Silicon chip redirects here. For the electronics magazine, see Silicon Chip. Integrated circuit from an EPROM memory microchip showing the memory blocks, the supporting circuitry and the fine silver wires which connect the integrated circuit die… … Wikipedia
Threshold voltage — The threshold voltage of a MOSFET is usually defined as the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. The creation of this layer is described next … Wikipedia
Silicon on insulator — technology (SOI) refers to the use of a layered silicon insulator silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance and thereby… … Wikipedia
AMD Fusion — Codename(s) Fusion Desna Ontario Zacate Llano Hondo (cancelled) Wichita (cancelled) Krishna (cancelled) Trinity Weatherford Richland IGP Wrestler WinterPark BeaverCreek ATI/Radeon Driver related BTC[1] [2] … Wikipedia
